( PHYSICS ) ANALOG & DIGITAL PRINCIPLES & APPLICATIONS ( Paper-2 ) B.Sc 6th Sem UP

Unit

Topics

No. of Lectures

Part A: Analog Electronic Circuits

I

Semiconductor Junction

Expressions for Fermi energy, Electron density in conduction band, Hole density in valence band, Drift of charge carriers (mobility & conductivity), Diffusion of charge carries and Life time of charge carries in a semiconductor. Work function in metals and semiconductors. Expressions for Barrier potential, Barrier width and Junction capacitance (diffusion & transition) for depletion layer in a PN junction. Expressions for Current (diode equation) and Dynamic resistance for PN junction.

09

II

Transistor Modeling

Transistor as Two-Port Network. Notation for dc & ac components of voltage & current. Quantitative discussion of Z, Y & h parameters and their equivalent two-generator model circuits. h-parameters for CB, CE & CC configurations. Analysis of transistor amplifier using the hybrid equivalent model and estimation of Input Impedance, Output Impedance and Gain (current, voltage & power).

08

III

Field Effect Transistors

JFET: Construction (N channel & P channel); Configuration (CS, CD & CG); Operation in different regions (Ohmic or Linear, Saturated or Active or Pinch off & Break down); Important Terms (Shorted Gate Drain Current, Pinch Off Voltage & Gate Source Cut-Off Voltage); Expression for Drain Current (Shockley equation); Characteristics (Drain & Transfer); Parameters (Drain Resistance, Mutual Conductance or Transconductance & Amplification Factor); Biasing w.r.t. CS configuration (Self Bias & Voltage Divider Bias); Amplifiers (CS & CD or Source Follower); Comparison (N & P channels and BJTs & JFETs). MOSFET: Construction and Working of DE-MOSFET (N channel & P channel) and E-MOSFET (N channel & P channel); Characteristics (Drain & Transfer) of DE-MOSFET and E-MOSFET; Comparison of JFFET and MOSFET.

08

IV

Other Devices

SCR: Construction; Equivalent Circuits (Two Diodes, Two Transistors & One Diode-One Transistor); Working (Off state & On state); Characteristics; Applications (Static switch, Phase control system & Battery charger). UJT: Construction; Equivalent Circuit; Working (Cutoff, Negative Resistance & Saturation regions); Characteristics (Peak & Valley points); Applications (Trigger circuits, Relaxation oscillators & Sawtooth generators).

05

Part B: Digital Electronics

V

Number System

Number Systems: Binary, Octal, Decimal & Hexadecimal number systems and their inter conversion. Binary Codes: BCD, Excess-3 (XS3), Parity, Gray, ASCII & EBCDIC Codes and their advantages & disadvantages. Data representation.

06

VI

Binary Arithmetic

Binary Addition, Decimal Subtraction 9’s & 10’s complement, Binary Subtraction using 1’s & 2’s compliment, Multiplication and Division.

05

VII

Logic Gates

Truth Table, Symbolic Representation and Properties of OR, AND, NOT, NOR, NAND, EX-OR & EX-NOR Gates. Implementation of OR, AND & NOT gates (realization using diodes & transistor). De Morgan’s theorems. NOR & NAND gates as Universal Gates. Application of EX-OR & EX-NOR gates as pairty checker. Boolean Algebra. Karnaugh Map.

09

VIII

Combinational & Sequential Circuits

Combinational Circuits: Half Adder, Full Adder, Parallel Adder, Half Substractor, Full Substractor. Data Processing Circuits: Multiplexer, Demultiplexer, Decoders & Encoders. Sequential Circuits: SR, JK & D Flip-Flops, Shift Register (transfer operation of Flip-Flops), and Asynchronous & Synchronous counters.

10